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K. SARMAH1,* , R. SARMA1, H. L. DAS1
Photocurrent decay characteristics were studied in CdSe thin films deposited by technique of thermal evaporation on suitably cleaned glass substrate held at elevated substrate temperatures. Two different decay times were found which correspond to two distinct trap levels. The trap depths were evaluated under different conditions of temperature and intensity. The trap depths were found to increase with ambient temperature and intensity of white light illumination. The estimated trap depths range from 0.4 eV to 0.7 eV.
Cadmium selenide thin film, Photocurrent decay, Trap depth.
K. SARMAH, R. SARMA, H. L. DAS, Trap depth analysis of thermally deposited CdSe thin films, Optoelectronics and Advanced Materials - Rapid Communications, 2, 5, May 2008, pp.262-266 (2008).
Submitted at: March 18, 2008
Accepted at: May 8, 2008
Optoelectronics and Advanced Materials - Rapid Communications
(2024): Impact Factor = 0.4 - Journal Citation Reports (Clarivate Analytics, 2025)
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