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Transport properties of epitaxial graphene grown on SiC substrate

SELMAN AĞIZAÇMAK1, REMZIYE TÜLEK1, SIBEL GÖKDEN1,* , ALI TEKE1, ENGIN ARSLAN2, AYŞE MELIS AYGAR3, EKMEL ÖZBAY2

Affiliation

  1. Department of Physics, Faculty of Science and Letter, Balıkesir University, Çağış Kampüsü, 10145 Balıkesir, Turkey
  2. Nanotechnology Research Center-NANOTAM, Department of Physics, Department of Electrical and Electronics Engineering, Bilkent University, 06800 Ankara, Turkey
  3. Department of Electrical and Computer Engineering, McGill University, Montreál, Quebec H3A2A7, Canada

Abstract

In this study, the Hall effect measurement of graphene on SiC substrate was carried out as a function of temperature (12-300 K). Hall data were first analyzed to extract the temperature dependent mobilities and carrier densities of the bulk (3D) and two dimensional (2D) channels using a Simple Parallel Conduction Extraction Method (SPCEM) successfully. High carrier mobility 2.296 cm2/V.s from the graphene layer and low carrier mobility 813 cm2/V.s from the SiC were obtained at room temperature. By using SPCEM extracted data, 3D and 2D scattering mechanisms were analyzed and the dominant scattering mechanisms in low and high temperature regimes were determined. It was found that the transport was mainly determined by scattering processes in 2D graphene..

Keywords

2D graphene, Scattering, SPCEM analysis, Hall effect, Transport.

Citation

SELMAN AĞIZAÇMAK, REMZIYE TÜLEK, SIBEL GÖKDEN, ALI TEKE, ENGIN ARSLAN, AYŞE MELIS AYGAR, EKMEL ÖZBAY, Transport properties of epitaxial graphene grown on SiC substrate, Optoelectronics and Advanced Materials - Rapid Communications, 11, 3-4, March-April 2017, pp.197-201 (2017).

Submitted at: July 12, 2016

Accepted at: April 6, 2017