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Transport and carrier injection effects of junction in spin-orbit coupling heterojunction using resonance force microscopy

R REN1,* , WEIREN WANG1, XUAN LI1, ZHONGXIA ZHAO1

Affiliation

  1. Department of optics, Xi’an Jiao Tong University, Xian, 710054, China

Abstract

Carrier transport effect was displayed between ZnO and LaGdSrCoO3 thin films epitaxially grown on LaAlO3 (100) substrates by pulse laser deposit. The photo-responsive resistance irradiated by 300fs laser pulse and magnetoresistance in fabricated ZnO/LGSrCO3+/LaAlO3 heterostructure were presented at 80-300 K. The ZnO/LGSCO heterojunction exhibited the carrier transfer of MIT transition and photoinduced demagnetization. The ZnO/LGSCO junction showed rectifying behavior at 80-300 K. Additionally, the heterostructure showed a positive colossal magnetoresistance (MR) effect over the range of 50–300 K which MR increased 5.32% at 0.5T and 4.62% at 0.2T, 100 K and a PR effect over the range of. 50–210 K..

Keywords

Carrier injection, Spin-orbit, Photoinduced demagnetization, MIT transition.

Citation

R REN, WEIREN WANG, XUAN LI, ZHONGXIA ZHAO, Transport and carrier injection effects of junction in spin-orbit coupling heterojunction using resonance force microscopy, Optoelectronics and Advanced Materials - Rapid Communications, 7, 7-8, July-August 2013, pp.593-596 (2013).

Submitted at: May 1, 2013

Accepted at: July 11, 2013