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C. IONESCU1,* , M. A. IONESCU1, I. CIUCA1
UPS, STM, XPS, and HIBS were performed to study initial stages of nucleation of Cu deposited from Cu(hfac)2 via chemical vapor deposition (CVD) on clean Si(111)-7x7 surface. At room temperature Cu binds to the substrate mostly by Cu(I) as demonstrated by the absence of shake-up features in the XPS spectra. HIBS using 12C3+ was performed in order to obtain the total Cu coverage (Cu atoms/cm2). The coverages are not linearly related to the apparent exposures..
Cu/Si(111), HIBS.
C. IONESCU, M. A. IONESCU, I. CIUCA, Total Cu coverage from Cu(hfac)2 deposition on Si(111)-7×7 at room temperature using HIBS, Optoelectronics and Advanced Materials - Rapid Communications, 6, 1-2, January-February 2012, pp.266-268 (2012).
Submitted at: Dec. 8, 2011
Accepted at: Feb. 20, 2012
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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