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Theoretical analysis the effect of material parameters on detectivity of In0.53Ga0.47As photovoltaic detector

LI XU1, YINGTIAN XU1,* , YONGGANG ZOU1, HE ZHANG1, YANG LI1, XIN ZHAO1, LIANG JIN1, XIAOHUI MA1, JINGZHI YIN2

Affiliation

  1. State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology, Changchun 130022, People’s Republic of China
  2. State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun, 130012, People’s Republic of China

Abstract

In this paper, the dependence of detectivity on the direction of incident light, carrier concentrations, surface recombination velocities and material thicknesses for In0.53Ga0.47As photovoltaic detector has been analyzed. When light injected from p-side, the p-region surface recombination velocity, its carrier concentration and thickness have significant impact to the detectivity. The n-region material parameters have slight impact on detectivity. The surface recombination velocity and its thickness influence is primarily for low carrier concentration (n<1017cm-3). When light injected from n-side, the n-region surface recombination velocity affects detectivity when n<1017cm-3; the influence of thickness on detectivity is primarily when n>1017cm-3..

Keywords

In0.53Ga0.47As PV detector, Material parameters, Detectivity.

Citation

LI XU, YINGTIAN XU, YONGGANG ZOU, HE ZHANG, YANG LI, XIN ZHAO, LIANG JIN, XIAOHUI MA, JINGZHI YIN, Theoretical analysis the effect of material parameters on detectivity of In0.53Ga0.47As photovoltaic detector, Optoelectronics and Advanced Materials - Rapid Communications, 10, 5-6, May-June 2016, pp.358-363 (2016).

Submitted at: Jan. 20, 2015

Accepted at: June 9, 2016