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In this paper, the dependence of detectivity on the direction of incident light, carrier concentrations, surface recombination velocities and material thicknesses for In0.53Ga0.47As photovoltaic detector has been analyzed. When light injected from p-side, the p-region surface recombination velocity, its carrier concentration and thickness have significant impact to the detectivity. The n-region material parameters have slight impact on detectivity. The surface recombination velocity and its thickness influence is primarily for low carrier concentration (n<1017cm-3). When light injected from n-side, the n-region surface recombination velocity affects detectivity when n<1017cm-3; the influence of thickness on detectivity is primarily when n>1017cm-3..
In0.53Ga0.47As PV detector, Material parameters, Detectivity.
LI XU, YINGTIAN XU, YONGGANG ZOU, HE ZHANG, YANG LI, XIN ZHAO, LIANG JIN, XIAOHUI MA, JINGZHI YIN, Theoretical analysis the effect of material parameters on detectivity of In0.53Ga0.47As photovoltaic detector, Optoelectronics and Advanced Materials - Rapid Communications, 10, 5-6, May-June 2016, pp.358-363 (2016).
Submitted at: Jan. 20, 2015
Accepted at: June 9, 2016