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The study of ZnO MSM UV photodetector with Pd contact electrodes on (PPC) plastic

N. N. JANDOW1,* , K. IBRAHIM1, F. K. YAM1, H. ABU HASSAN1, S. M. THAHAB2, OSAMA.S. HAMAD3

Affiliation

  1. Nano-Optoelectronics Research and Technology Laboratory School of Physics
  2. Materials Engineering Department College of Engineering University of Kufa NAJAF IRAQ
  3. School of Electrical and Electronic Engineering, Universiti Sains Malaysia, 11800 Minden, Penang, Malaysia

Abstract

In this paper, we report the fabrication and investigation of metal-semiconductor-metal UV photodetector (MSM UV PD) by deposition ZnO thin film on poly propylene carbonate (PPC) plastic substrate by direct current (DC) sputtering technique, using palladium (Pd) contact electrodes. The structural, optical and electrical properties of the ZnO thin film were studied by using X-Ray diffraction (XRD) measurement, and photoluminescence (PL). The electrical characteristics of the detector were investigated using the reverse biased current–voltage (I–V) measurements which show that the dark- and photocurrents were found to be 6.21 and 93.8 μA, respectively, Using forward dark conditions at 5 volt; the barrier height φB was calculated and it was found to be 0.70 eV. Under incident wavelength of 385 nm, the maximum responsivity (R) of the Pd/ZnO/Pd MSM PD was determined to be 1.473 A/W.

Keywords

ZnO, DC sputtering, Barrier height; Metal–semiconductor–metal (MSM) photodiodes.

Citation

N. N. JANDOW, K. IBRAHIM, F. K. YAM, H. ABU HASSAN, S. M. THAHAB, OSAMA.S. HAMAD, The study of ZnO MSM UV photodetector with Pd contact electrodes on (PPC) plastic, Optoelectronics and Advanced Materials - Rapid Communications, 4, 5, May 2010, pp.726-730 (2010).

Submitted at: April 30, 2010

Accepted at: May 20, 2010