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The structure and photoluminescence performances of Zn x Al 2 O 4 :Cr 3+ crystals with various annealing temperatures

A. P. ZHOU1, D. ZHANG2,* , Z. Q. GONG3, Q. SHI2, C. LI1

Affiliation

  1. School of Physics and Optoelectronic Engineering , Shandong University of Technolog y , Zibo 255049, China
  2. School of Physical Science and Information Technology, Liaocheng University, Liaocheng 252059, China
  3. School of Materials Science and Engineering, Shandong University of Science and Technology, Qingdao 266590, China

Abstract

Zn x Al 2 O 4 : Cr 3+ (0.1 mol%) crystals were synthesized by using sol gel method follow by the annealing treatment with temperatures ranging from 600 C to 1000 C. A series of emission peaks associated with the spin forbidden 2 E g 4 A 2g transition of Cr 3+ ions were observed at the range from 650 nm to 720 nm. With the Zn/Al molar ratio increasing, the results of X ray photoelectron spectra showed that the excess Al ions occupying tetrahedral sites decreased. Meanwhile the full width at half m aximum of emission peaks became m uch narrower, and the intensity ratio between R line and N line increased for all samples but decreased with the annealing temperature increasing..

Keywords

Semiconductors ZnAl 2 O 4 crystals Spinel struc ture Photoluminescence.

Citation

A. P. ZHOU, D. ZHANG, Z. Q. GONG, Q. SHI, C. LI, The structure and photoluminescence performances of Zn x Al 2 O 4 :Cr 3+ crystals with various annealing temperatures, Optoelectronics and Advanced Materials - Rapid Communications, 12, 9-10, September-October 2018, pp.588-594 (2018).

Submitted at: May 30, 2017

Accepted at: Oct. 10, 2018