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The optical absorption of Se95As5 system doped by atoms of samarium

A. I. ISAYEV1, S. I. MEKHTIYEVA1, N. Z. JALILOV1, R. I. ALEKPEROV1,* , V. Z. ZEYNALOV1

Affiliation

  1. Institute of Physics of the Azerbaijan NAS АZ 1143, Baku, G.Javid pr., 33, Azerbaijan

Abstract

During the investigation of optical properties of the Se95As5 chalcogenide vitreous semiconductor (CVS) structure containing impurity of samarium, it was established that there is a correlation between dependences of optical absorption factor (α), its photoinduced change (Δα), effective concentration of the charged defects (Nt) and the characteristic energy (Е0), corresponds to Urbach absorption on the concentration of entered atoms of rare earth impurity elements (Sm). It is shown, that absorption of light in the spectrum region corresponds to Urbach rule and in the weak absorption region, i.e. in the «tail» area is controlled by the charged defects (U––centers). It was established, that by changing the impurity atoms content it is possible to change the concentration of intrinsic charged defects that allows controlling the optical properties of CVS material.

Keywords

Se-As, Optical absorption, Samarium doping.

Citation

A. I. ISAYEV, S. I. MEKHTIYEVA, N. Z. JALILOV, R. I. ALEKPEROV, V. Z. ZEYNALOV, The optical absorption of Se95As5 system doped by atoms of samarium, Optoelectronics and Advanced Materials - Rapid Communications, 1, 8, August 2007, pp.368-372 (2007).

Submitted at: May 22, 2007

Accepted at: July 8, 2007