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WISAM J. AZIZ1,* , K. IBRAHIM1
The (InN/Si) and (GaN/Si) solar cells was designed and investigated by using ISE TCAD simulation software under air mass 1.5 global irradiance spectrum. The doping levels of p-type and n-type were 1×1019 cm−3 and 1×1018 cm−3 respectively. The thickness of InN and GaN was changed several times as (0.2,0.4,0.6,0.8 and 1 μm). In this study, we present the effect of n- type layers thickness variation on the performance of InN and GaN solar cells structures. In this numerical study, all the processing conditions were kept constant except the thickness. The efficiency values were (29.15%) and (19.69%) for GaN and InN, respectively..
III-V nitride compounds, Critical thickness, Diffusion length, Resistivity.
WISAM J. AZIZ, K. IBRAHIM, The influence of thickness variation on the efficiency of (InN/Si) and (GaN/Si) solar cells, Optoelectronics and Advanced Materials - Rapid Communications, 4, 1, January 2010, pp.1-3 (2010).
Submitted at: Dec. 3, 2009
Accepted at: Jan. 19, 2010
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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