"

Cookies ussage consent

I agree.

Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.

The influence of SiO2 and Al2O3 gate insulator to the performance of In-Ga-Zn-O thin film transistors

XINGWEI DING1, WEIMIN SHI1,* , JIANHUA ZHANG2,* , HAO ZHANG2, JUN LI2, XUEYIN JIANG2, ZHILIN ZHANG1,2

Affiliation

  1. Department of Materials Science, Shanghai University, Shanghai 200072, China
  2. Key Laboratory of Advanced Display and System Application, Ministry of Education, Shanghai University, 200072, China

Abstract

The authors report on the fabrication of IGZO thin film transistor with SiO 2 or Al 2 O 3 gate insulato r . Effect s of SiO 2 and Al 2 O 3 gate insulator for TFT have been investigated . The TFT with SiO 2 gate insulator shows a field effect mobility of 3.6 cm 2 /V s, a threshold voltage of 4.7 V , an I o n I o ff ratio of 1.6×107 and a subthreshold swing of 0.46 V /decade ; The TFT with Al 2 O 3 gate insulator shows a field effect mobility of 5.2 cm 2 /V s, a threshold voltage of 3 V, an I on I off ratio of 3.4×107, and a subthreshold swing of 0.37 V /decade respectively. TFTs with low k insulator have low on current due to the low capacitanc es of the materials. The experiment results show that the type of gate insulators plays an important role in both the field effect mobility and bias stability of the devices. Using high-k insulator is an effective way to decrease the drive voltage for TFT devices..

Keywords

IGZO Thin film transistor, SiO2 ; Al2O3, Gate insulator.

Citation

XINGWEI DING, WEIMIN SHI, JIANHUA ZHANG, HAO ZHANG, JUN LI, XUEYIN JIANG, ZHILIN ZHANG, The influence of SiO2 and Al2O3 gate insulator to the performance of In-Ga-Zn-O thin film transistors, Optoelectronics and Advanced Materials - Rapid Communications, 8, 7-8, July-August 2014, pp.659-662 (2014).

Submitted at: March 26, 2013

Accepted at: July 10, 2014