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V. IVANOVA1, Y. TRIFONOVA1, P. PETKOV1, T. PETKOVA2,*
Ligth-induced changes in the optical properties of Ge-Te-In thin films have been studied. The refractive index, the absorption coefficient and the optical band gap of the films have been determined before and after exposure by analyzing the material's transmission spectrum. The thin film's nonuniform thickness was accounted for to accurately determine the optical constants. The variations in the optical parameters and bang gap are discussed due to glass structure reorganization after indium introduction..
Band gap structure, Chalcogenide thin films, Irradiation, Optical properties.
V. IVANOVA, Y. TRIFONOVA, P. PETKOV, T. PETKOVA, The influence of In on photo-induced properties of Ge-Te-In chalcogenide thin films, Optoelectronics and Advanced Materials - Rapid Communications, 8, 1-2, January-February 2014, pp.42-44 (2014).
Submitted at: Nov. 13, 2013
Accepted at: Jan. 22, 2014
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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