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The effects of RTP processing on recombination and electron transfer in Cz-Si wafers passivated with hydrogenated silicon-nitride thin films

YACINE KOUHLANE1,* , YOUGHERTA CHIBANE2, DJOUDI BOUHAFS3

Affiliation

  1. L.A.S.M.A Laboratory, Department of Physics, University Badji Mokhtar (UBMA), Annaba, 23000, Algeria
  2. L.S.C Laboratory, Department of Physics, University Badji Mokhtar (UBMA), Annaba, 23000, Algeria
  3. Research Center in Semiconductor Technology for the Energetic (CRTSE), Algiers, 16038, Algeria

Abstract

This study investigates the electronic passivation of p-type Czochralski silicon wafers using SiNx:H nitride layers treated by rapid thermal processing (RTP) at peak temperatures ranging from 600 to 900 °C. The impact of RTP process on reflectivity (R) and carrier lifetime (τeff) was analysed. The results show that SiNx:H passivation is the most effective at peak temperature of 700 °C. Additionally, exposing the wafers to a soaking step in hydrofluoric acid (HF) accelerated the degradation of τeff for samples treated at 700 °C. Further, raising the peak temperature above 700 °C had a negative impact on the quality of the SiNx:H layer, but was effective in increasing the volume passivation. The study highlights the importance of controlling temperature and processing and using hydrogenated silicon nitride films to reduce the thermal budget of RTP processing in the manufacture of silicon solar cells.

Keywords

Rapid thermal processing (RTP), Silicon nitride passivation, Carrier lifetime.

Citation

YACINE KOUHLANE, YOUGHERTA CHIBANE, DJOUDI BOUHAFS, The effects of RTP processing on recombination and electron transfer in Cz-Si wafers passivated with hydrogenated silicon-nitride thin films, Optoelectronics and Advanced Materials - Rapid Communications, 18, 3-4, March-April 2024, pp.185-189 (2024).

Submitted at: March 14, 2023

Accepted at: April 8, 2024