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F. Z. JASIM1, K. OMAR1,* , Z. HASSAN1
The performance of 850 nm GaAs multiple quantum well (MQWs) vertical cavity surface emitting laser (VCSEL) laser structure has been numerically investigated by using laser technology-integrated program ISETCAD simulation. The effect of the doping concentration on the VCSEL output performance has been investigated. The maximum output power and lower threshold current was observed when both distributed Bragg reflector DBR and spacer layers are doped with high level doping concentration. In addition, it was observed that doping can strongly affect the slope efficiency of the VCSEL.
GaAs, 850 nm, VCSEL.
F. Z. JASIM, K. OMAR, Z. HASSAN, The effect of doping concentration on VCSEL performance, Optoelectronics and Advanced Materials - Rapid Communications, 3, 1, January 2009, pp.10-12 (2009).
Submitted at: Nov. 12, 2008
Accepted at: Jan. 21, 2009
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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