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The effect of atomic oxygen treatment on the oxygen deficiencies of Hafnium oxide films

Z. W. MA1,2, Y. Z. XIE1, L. X. LIU1, Y. R. SU1, H. T. ZHAO1, B. Y. WANG3, X. B. QIN3, P. ZHANG4, J. LI1, E. Q. XIE1,*

Affiliation

  1. Institute of Electronic Materials, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, P. R. China
  2. Department of Physics and Electronic Engineering, Yuncheng University, Yuncheng 044000, P.R. China
  3. Key Laboratory of Nuclear Analysis Techniques, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, P.R. China
  4. cKey Laboratory of Nuclear Analysis Techniques, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, P.R. China

Abstract

We have demonstrated the improvement of Hafnium oxide (HfO2) films via atomic oxygen post-treatments. The films were characterized using spectroscopic ellipsometry (SE), synchrotron X-ray reflectivity (XRR), and Doppler broadening spectroscopy (DBS) of positron annihilation radiation. The results indicated that the O deficiencies in HfO2 films greatly decreased after the treatment. It approved that atomic oxygen post-treatment is an effective method to improve the properties of HfO2 films. Moreover, the proper treatment conditions should be necessary. This research provides a new insight for the preparation of high quality oxide films.

Keywords

HfO2 films, Atomic oxygen treatment, O deficiency.

Citation

Z. W. MA, Y. Z. XIE, L. X. LIU, Y. R. SU, H. T. ZHAO, B. Y. WANG, X. B. QIN, P. ZHANG, J. LI, E. Q. XIE, The effect of atomic oxygen treatment on the oxygen deficiencies of Hafnium oxide films, Optoelectronics and Advanced Materials - Rapid Communications, 4, 10, October 2010, pp.1493-1496 (2010).

Submitted at: Sept. 19, 2010

Accepted at: Oct. 14, 2010