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HUIFEN LU1, WENTIAN CAO1,* , SHUYUN WANG1, WEI REN1, HAO ZHUANG1
The main purpose of this article is to study the effect of annealing temperature on the characterization of Al/PbTe films. The Al/PbTe films were prepared by RF magnetron sputtering and then annealed in the vacuum resistance furnace at different temperatures. The thicknesses of Al and PbTe are 20 nm and 300 nm respectively. Effect of annealing temperature on the characteristics of Al/PbTe films was investigated. We choose 1173 K, 1223 K and 1253 K as our annealing temperatures. Scanning electron microscope (SEM), X-ray diffraction (XRD) and Fourier transform infrared spectroscopy (FTIR) were carried out to characterize the deposited films. The sheet resistance of the samples was measured with a four-point probe. The experimental results show that annealing treatment has very big effect on the surface morphology, transmittance and resistivity of the Al/PbTe thin films..
Al/PbTe, Thin film, Magnetron sputtering, Annealing temperature.
HUIFEN LU, WENTIAN CAO, SHUYUN WANG, WEI REN, HAO ZHUANG, The effect of annealing temperature on the characterization of Al/PbTe films, Optoelectronics and Advanced Materials - Rapid Communications, 5, 10, October 2011, pp.1069-1071 (2011).
Submitted at: Aug. 27, 2011
Accepted at: Oct. 20, 2011
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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