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A. ASİMOV1, M. AHMETOGLU (AFRAİLOV)1,* , B. KUCUR1, M. ÖZER2, T. GÜZEL2
The electronic and interface state density distribution properties obtained from current–voltage (I–V) and capacitance–voltage (C–V) characteristics of Au/p-type GaAs Schottky barrier diode (SBD) at room temperature was investigated. The (I–V)–T characteristics are analysed on the basis of thermionic emission (TE). The forward bias I–V of SBDs have been studied at room temperature. SBD parameters such as ideality factor n, series resistance (RS) determined by Cheung’s functions and Schottky barrier height, Φbo, are investigated as functions of temperature. The diode parameters such as ideality factor, series resistance and barrier heights were found as 1.76-2.16 and 2.2-1.8 Ω and 0.53–0.72 eV, respectively. The diode shows non-ideal I–V behaviour with an ideality factor greater than unity. Furthermore, the energy distribution of interface state density was determined from the forward bias I–V characteristics by taking into account the bias dependence of the effective barrier height. The results show the presence of thin interfacial layer between the metal and semiconductor..
GaAs Schottky barrier, Series resistance interface state density.
A. ASİMOV, M. AHMETOGLU (AFRAİLOV), B. KUCUR, M. ÖZER, T. GÜZEL, The determination of series resistance and interface state density distributions of Au/p-type GaAs Schottky barrier diodes, Optoelectronics and Advanced Materials - Rapid Communications, 7, 7-8, July-August 2013, pp.490-493 (2013).
Submitted at: Sept. 12, 2012
Accepted at: July 11, 2013
Optoelectronics and Advanced Materials - Rapid Communications
(2022): 0.5 - 2022 Journal Citation Reports (Clarivate Analytics, 2023)
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