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A. ASİMOV1,* , M. AHMETOGLU (AFRAİLOV)1
Current–voltage (I–V) characteristics of Al/MDMO-PPV/p-Si (111) Schottky barrier diodes (SBDs) have been investigated at room temperature. Here, (MDMO-PPV) poly-[2-(3,7-dimethyloctyloxy)-5-methyloxy]-para-phenylene-vinylene has been used as interfacial layer between metal and semiconductor layers. The characteristic parameters of the structure such as barrier height, ideality factor, interface states density and series resistance were determined from the electrical measurements. Also, Cheung functions and Norde method were used to evaluate the I–V characteristics and to obtain the characteristic parameters of the Schottky contact. The diode parameters such as ideality factor, barrier heights and interface state density, series resistance were found as 1,73-1,93 and 0,89–0,79 eV and 1,11×1012 eV−1 cm−2 at (1,09−Ev) eV to 9,91×1014 eV−1 cm−2 at (0,87−Ev) eV respectively. The series resistance RS values were determined from dV/dln I–I and H(I)–I plots and were found to be 9,2x103 kΩ and 10,1x103 kΩ respectively..
Schottky barrier diode, Idealityfactor, Barrier height, Conducting polymers, MDMO-PPV.
A. ASİMOV, M. AHMETOGLU (AFRAİLOV), The determination of electronic parameters of Al/MDMO-PPV/p-Si/Al Schottky diode by current–voltage characteristics, Optoelectronics and Advanced Materials - Rapid Communications, 8, 9-10, September-October 2014, pp.975-979 (2014).
Submitted at: Oct. 24, 2013
Accepted at: Sept. 11, 2014
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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