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The critical current density of SiC-doped MgB2 as determined from the Campbell penetration depth using the tunnel-diode resonator technique

GUO ZHICHAO1, SUO HONGLI1,* , LIU ZHIYONG1, V. SANDU2, G. ALDICA2, P. BADICA2

Affiliation

  1. The Key Laboratory of Advanced Functional Materials, Ministry of Education, College of Materials Science and Engineering, Beijing University of Technology, Beijing 100124, China
  2. Department of Magnetism and Superconductivity, National Institute of Materials Physics-Bucharest, Magurele, 077125 Romania

Abstract

The tunnel-diode resonator (TDR) technique for accurate measurements of the magnetic penetration depth is used to measure the London and Campbell penetration depths of polycrystalline SiC doped (10wt.%) MgB2. The Campbell length was used to investigate the field and temperature dependence of the critical current density. The as determined critical current density provides values as high as 6×106 A/cm2 at 4.2K, 1T, which is higher than values estimated by Bean method..

Keywords

Campbell length, Magnetic penetration depths, Tunnel-diode resonator technique, Critical current density.

Citation

GUO ZHICHAO, SUO HONGLI, LIU ZHIYONG, V. SANDU, G. ALDICA, P. BADICA, The critical current density of SiC-doped MgB2 as determined from the Campbell penetration depth using the tunnel-diode resonator technique, Optoelectronics and Advanced Materials - Rapid Communications, 6, 11-12, November-December 2012, pp.976-979 (2012).

Submitted at: June 22, 2012

Accepted at: Oct. 30, 2012