Abstract
This paper presents a theoretical study of the carrier mobility in Indium Nitride (InN) material system. We used a model,
referred to as α-model, based on a simplified relationship between the donor and dislocation densities, ND=α(Ndis/c). It has
been shown that this model correctly predicts the low temperature mobilities in InN/sapphire lattice mismatched system with
high concentrations of impurities, point defects, and dislocations. It yields important information on the donors and
dislocations in the InN/Al2O3 interface region. The donor and dislocation concentrations were calculated and compared
favorably with the recently reported Hall mobility data. The specific α value was calculated for InN and its validity was
confirmed. The predicted and experimental results also suggested that the potential candidate for dominant donor in InN is
hydrogen.
Keywords
InN, Lattice mismatched, Dislocation, Impurity, Degenerate.
Citation
S GÖKDEN, A TEKE, R BARAN, The applicability of α model to the degenerate InN, Optoelectronics and Advanced Materials - Rapid Communications, 1, 2, February 2007, pp.57-60 (2007).
Submitted at: Dec. 6, 2006
Accepted at: Jan. 15, 2007