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The applicability of α model to the degenerate InN

S GÖKDEN1,* , A TEKE1, R BARAN1

Affiliation

  1. Balikesir University, Faculty of Art & Science, Department of Physics, Balıkesir-Turkey

Abstract

This paper presents a theoretical study of the carrier mobility in Indium Nitride (InN) material system. We used a model, referred to as α-model, based on a simplified relationship between the donor and dislocation densities, ND=α(Ndis/c). It has been shown that this model correctly predicts the low temperature mobilities in InN/sapphire lattice mismatched system with high concentrations of impurities, point defects, and dislocations. It yields important information on the donors and dislocations in the InN/Al2O3 interface region. The donor and dislocation concentrations were calculated and compared favorably with the recently reported Hall mobility data. The specific α value was calculated for InN and its validity was confirmed. The predicted and experimental results also suggested that the potential candidate for dominant donor in InN is hydrogen.

Keywords

InN, Lattice mismatched, Dislocation, Impurity, Degenerate.

Citation

S GÖKDEN, A TEKE, R BARAN, The applicability of α model to the degenerate InN, Optoelectronics and Advanced Materials - Rapid Communications, 1, 2, February 2007, pp.57-60 (2007).

Submitted at: Dec. 6, 2006

Accepted at: Jan. 15, 2007