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Temperature effect on the performance of n-type c -Si film grown by linear facing target sputtering for thin film silicon photovoltaic devices

A. IBRAHIM1,* , A. A. EL-AMIN2

Affiliation

  1. Physics department, Faculty of Science, Tanta University, 31 527 Tanta, Egypt Present address: Physics department, Faculty of Science, Northern Border University, 1321 Arar, KSA
  2. Faculty of Science, Physics department, South Valley University, Aswan, Egypt Present address: Physics department, Faculty of Science and Arts, Yanbu, Taibah University, KSA

Abstract

In this paper, the effect of temperature on performance of (Al+Ag)/n-  c –Si/ p-Si/Al thin Film Grown by Linear Facing Target Sputtering thin Film solar cells devices is investigated.  c n-Si type is used as donor whereas p-type used as an acceptor. The optimised device has an efficiency of ~23.5% at room temperature. Investigations on the optimized device show that temperature has significant effect on the photovoltaic performance. Short circuit current density (Jsc) and fill factor (FF) increase whereas open circuit voltage (Voc) increases with reduction in temperature. The increasing in Jsc has been attributed to the temperature dependent electronic properties of the active  c n-Si layers while the increment in the Voc has been attributed to the reduction in band bending and increment in built in voltage (Vbi) on lowering of temperature. In overall the efficiency first increases and then decreases with reduction in temperature..

Keywords

Thin film solar cells, Electrical performance, Electronic properties, Fill factor, Short circuit current density, Open circuit voltage, Series and shunt resistances.

Citation

A. IBRAHIM, A. A. EL-AMIN, Temperature effect on the performance of n-type c -Si film grown by linear facing target sputtering for thin film silicon photovoltaic devices, Optoelectronics and Advanced Materials - Rapid Communications, 6, 1-2, January-February 2012, pp.73-77 (2012).

Submitted at: Dec. 4, 2011

Accepted at: Feb. 20, 2012