"

Cookies ussage consent

I agree.

Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.

Temperature dependent dielectric properties of Schottky diodes with organic interfacial layer

İ. DÖKME1, T. TUNÇ2,* , Ş. ALTINDAL3, İ USLU4

Affiliation

  1. Science Education Department, Faculty of Gazi Education, Gazi University, Ankara, Turkey
  2. Science Education Department, Faculty of Education, Aksaray University, Aksaray, Turkey
  3. Physics Department, Faculty of Arts and Sciences, Gazi University, Ankara, Turkey
  4. ChemistryEducation Department, Faculty of Education, Selçuk University, Konya, Turkey

Abstract

The dielectric properties of Au/PVA(Co,Ni-doped)/n-Si Schottky diodes (SDs) have been studied in the temperature range of 80-400 K. In this study, polyvinyl alcohol (PVA) film was used as an interfacial layer between metal and semiconductor. The dielectric constant (ε′), dielectric loss (ε″), dielectric loss tangent (tan δ) and the ac electrical conductivity (σac) obtained from the measured capacitance and conductance are studied for Au/PVA(Co,Ni-Doped)/n-Si SDs. Experimental results show that the values of ε', ε″ and tanδ were found a function of temperature. The ac electrical conductivity (σac) of Au/PVA(Co,Ni-Doped)/n-Si SDs is found to increase with temperature..

Keywords

Au/PVA(Co,Ni-Doped)/n-Si, Polyvinyl alcohol, Dielectric properties, Electrospining technique.

Citation

İ. DÖKME, T. TUNÇ, Ş. ALTINDAL, İ USLU, Temperature dependent dielectric properties of Schottky diodes with organic interfacial layer, Optoelectronics and Advanced Materials - Rapid Communications, 4, 8, August 2010, pp.1225-1228 (2010).

Submitted at: July 22, 2010

Accepted at: Aug. 12, 2010