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Temperature dependent current-voltage (I-V) characteristics of Al/n-Cadmium Selenide-Polyvinyl alcohol (Al/n-CdSe-PVA) Schottky diode

MAMTA SHARMA1, S. K. TRIPATHI1,*

Affiliation

  1. Department of Physics, Center of Advanced Study in Physics, Panjab University, Chandigarh-160 014, India

Abstract

The paper reports the fabrication and characterization of Al/n-Cadmium Selenide -Polyvinyl Alcohol (Al/n-CdSe-PVA) Schottky diode. I-V characteristics have been measured at different temperatures in the forward and reverse bias. The different parameters like ideality factor (n), the effective barrier height (Φb), the Richardson constant (A*) has been calculated. Temperature dependent barrier height and ideality factor is also studied. The series resistance (RS) is calculated by using the Cheung’s method. The reverse biased leakage current with the temperature have played important role in inhomogeneity of the barrier height. The recombination - tunneling mechanism is used to explain the conduction process in Schottky diode..

Keywords

Barrier height, Nanocomposite, Schottky diode, Nanorods, Polymer.

Citation

MAMTA SHARMA, S. K. TRIPATHI, Temperature dependent current-voltage (I-V) characteristics of Al/n-Cadmium Selenide-Polyvinyl alcohol (Al/n-CdSe-PVA) Schottky diode, Optoelectronics and Advanced Materials - Rapid Communications, 6, 1-2, January-February 2012, pp.200-204 (2012).

Submitted at: Dec. 15, 2011

Accepted at: Feb. 20, 2012