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D. KORUCU1,* , Ş. ALTINDAL1, T. S. MAMMADOV2, S. ÖZÇELIK1
The observed non-ideal of Sn/p-InP Schottky barrier diode (SBD) parameters such as the zero-bias barrier height ΦΒο(I-V and ideality factor n were obtained from the forward bias current-voltage (I-V) characteristics in the temperature range of 80-400 K. By using the thermionic emission (TE) mechanism, the ΦΒο(I-V) and n were found strongly temperature dependent and while the ΦΒο(I-V) increases, the n decreases with increasing temperature. Also, especially at low temperatures the conventional Richardson plot is clearly non-linear. Such behavior of ΦΒο(I-V) and n is attributed to SB inhomogeneities by assuming a Gaussian distribution (GD) of barrier heights (BHs) at metal/semiconductor interface. Therefore, ⎯ΦBo and effective Richardson constant A* are found as 1.151 eV and 56.954 A/cm2 K2 , respectively, from a modified ln(Io/T2 )-q2 σo 2 /2(kT)2 vs q/kT plot and this value of the A* (56.954 A/cm2 K2 ) is very close to the theoretical value of 60 A/cm2 K2 for p-InP.
Sn/p-InP SBDs, Barrier inhomogeneity, Gaussian distribution, Temperature dependence.
D. KORUCU, Ş. ALTINDAL, T. S. MAMMADOV, S. ÖZÇELIK, Temperature dependent behavior of Sn/p-InP Schottky barrier diodes, Optoelectronics and Advanced Materials - Rapid Communications, 2, 12, December 2008, pp.766-769 (2008).
Submitted at: Oct. 27, 2008
Accepted at: Dec. 4, 2008
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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