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Taguchi optimization of the peak lasing power of a numerically-simulated double wafer-fused InP/GaAs LW-VCSEL

P. S. MENON1,* , P. R. APTE2

Affiliation

  1. Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia (UKM) 43600 UKM Bangi, Selangor, Malaysia
  2. College of Engineering Pune, Pune - Maharashtra 411005, India

Abstract

The advent of high speed and high bandwidth optical access networks, such as fiber-to-the-home (FTTH), is the driving force behind the demand for low-cost, high-power optical components. Long-wavelength Vertical Cavity Surface-Emitting Lasers (LW-VCSEL) are attractive as light sources in these networks because they offer unique features such as low power consumption, narrow beam divergence and ease of fabrication in two-dimensional arrays. Furthermore, device operation in the 1.55 μm wavelength regime offers the advantages of low dispersion and low optical loss in fiber optic transmission systems. This paper reports the optimization of the peak lasing power of a numerically simulated LW-VCSEL model which utilizes InGaAsP-based multi-quantum wells (MQW) using Taguchi’s orthogonal array method in an effort to further increase the peak lasing power. Four control factors at three value levels form the inner L9 orthogonal array whereas two noise factors at three levels form the outer 3x3 factorial array. The optimum design parameter combination was obtained by using the analysis of ‘larger-the-better’ (LTB) and ‘nominal-the-best’ (NTB) signal-to-noise ratio (SNR). This work reports the fine-tuning of the factor levels to further increase the peak lasing power up to 12.62 mW which is a 160 % improvement compared to the original device design..

Keywords

Taguchi, Optimization, Fine-tuning, Modelling and simulation, LW-VCSEL, Peak lasing power, MQW, InGaAsP.

Citation

P. S. MENON, P. R. APTE, Taguchi optimization of the peak lasing power of a numerically-simulated double wafer-fused InP/GaAs LW-VCSEL, Optoelectronics and Advanced Materials - Rapid Communications, 9, 1-2, January-February 2015, pp.40-47 (2015).

Submitted at: Jan. 29, 2013

Accepted at: Jan. 21, 2015