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Synthesis of FeO nanorods on silicon substrate using annealing technique

R. KUMAR1,* , N. THAKUR2

Affiliation

  1. Department of Physics, Jaypee University of Information Technology, Soaln 173215 (H.P.), India
  2. Department of Physics, Himachal Pradesh University, Shimla 171005 (H.P), India

Abstract

We have synthesized nanorods of FeO by annealing FeCl3 on silicon substrate at 950 oC in presence of H2 gas diluted in argon (Ar). Field emission electron microscopy (FESEM), Energy dispersive x-ray (EDX) and High resolution transmission electron microscopy (HRTEM) techniques have been used to characterize the nanorods. HRTEM study shows crystalline formation of nanorods. The electron diffraction pattern along viewing direction (111) and HRTEM show the interplaner distance equal to 2.17 Å which is nearly equal to the slandered value 2.3 Å of the FeO, EDX data also confirmed nanorods of FeO.

Keywords

FeO nanorods, Silicon substrate, FESEM, EDX, HRTEM.

Citation

R. KUMAR, N. THAKUR, Synthesis of FeO nanorods on silicon substrate using annealing technique, Optoelectronics and Advanced Materials - Rapid Communications, 3, 9, September 2009, pp.933-935 (2009).

Submitted at: June 9, 2009

Accepted at: Sept. 15, 2009