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S. SHANMUGAN1,* , D. MUTHARASU1
Te/Cd/Te/Zn/Cd stacked layers were prepared for 10% Zn doping. All stacks were annealed from 200 °C – 500 °C and confirmed as polycrystalline nature. CdTe and ZnTe cubic/hexagonal phases were identified at high annealing temperature. Transmittance against wave length emphasized the significance of 10% Zn in Te/Cd stack. The optical constants n and k were calculated as n = 1.52-2.45 and k = 0.07-0.36. The band gaps (Eg) were observed between 1.38 and 1.44 eV at above 350 °C. A uniform surface morphology could be observed at high annealing temperatures.
Multilayer, Physical vapor deposition (PVD), Structural properties, Topography, Surface properties.
S. SHANMUGAN, D. MUTHARASU, Synthesis and properties of 10% Zn doped CdTe thin films, Optoelectronics and Advanced Materials - Rapid Communications, 4, 10, October 2010, pp.1601-1607 (2010).
Submitted at: Sept. 24, 2010
Accepted at: Oct. 14, 2010
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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