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ANIL B. PATIL1, A. M. MAHAJAN1,*
We have prepared CeO2 dielectric thin films using Cerium Chloride Heptahydrate, ethanol and citric acid as additive by solgel and deposited films were characterized for various properties. The micro-structural properties of these films were studied by XRD which reveals that the deposited film has amorphous structure which loweres leakage current. Chemical compositions of deposited thin films were analyzed by FTIR and EDAX which shows existence of CeO2. The samples were optically characterized using Ellipsometry to find Refractive Index which is 3.615. This paper explores the properties of CeO2 thin films to produce better promising gate dielectric in CMOS device applications.
High-K, CeO2, Gate dielectrics, Thin film, Sol-gel.
ANIL B. PATIL, A. M. MAHAJAN, Synthesis and characterization of sol-gel derived CeO2 dielectric thin films for CMOS devices, Optoelectronics and Advanced Materials - Rapid Communications, 2, 12, December 2008, pp.811-813 (2008).
Submitted at: Nov. 5, 2008
Accepted at: Dec. 4, 2008
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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