Abstract
Nanostructured cadmium sulfide doped by copper (CdS:Cu) thin films were deposited on glass and wafer silicon by chemical bath deposition method. The prepared thin films were annealed at 250 oC at different times (30, 60, and 90 min). The structural properties of the samples were characterized using X-ray diffraction (XRD), and the crystalline size of the CdS:Cu thin films was calculated from XRD data. All samples had a polycrystalline structure, and annealing time increased the crystalline size. Field emission scanning electron microscopy of the morphology of the CdS:Cu thin films revealed the presence of nanoparticles with grain sizes ranging from 71.52 nm to 26.55 nm after 90 min of annealing. Moreover, CdS:Cu thin films were deposited on an n-type silicon substrate to prepare a CdS:Cu/Si junction, and the effects of annealing time on the electrical properties of this junction were investigated. The current density-voltage (J-V) characteristics were studied, and the results revealed that the CdS:Cu/Si junction had an ideality factor (n*) of 1.381 and a saturation current (Js) of 0.007 mA/cm2, which increases with increasing annealing time. However, the potential barrier (Φb) and the rectification factor (Rf) decreased with increasing annealing time, indicating a trade-off between conductivity and Rf due to substantial changes in the electrical transmission mechanisms.
Keywords
Chemical bath deposition, CdS:Cu, Nanoparticles, CdS:Cu/Si, p-n junction.
Citation
ISRAA AKRAM ABBAS, AMEERA J. KADHM, HAYIM CHASEB MAGID, TAREQ H. ABBOOD, TARIQ J. ALWAN, Synthesis and characterization of nanostructured CdS:Cu thin films prepared by CBD for diode applications, Optoelectronics and Advanced Materials - Rapid Communications, 20, 3-4, March-April 2026, pp.179-184 (2026).
Submitted at: Nov. 17, 2025
Accepted at: April 8, 2026