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Study on the relationship between laser induced d amage threshold and microscopic properties of Ta2O5 films by the combination of experiment and simulation

CHENG XU1,* , MING MA1, HUANHUAN SUN1, DI LIN1, PEIZHONG FENG1, JIANWEI QI1, YINGHUAI QIANG1, DAWEI LI2, CHUNXIAN TAO2

Affiliation

  1. School of Materials Science and Engineering, China University of Mining and Technology, Xuzhou 221116, China
  2. Key Laboratory of High Power Laser Materials, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China

Abstract

Ta2O5 films were prepared by electron beam evaporation under different oxygen partial pressures. Three Ta2O5 models were constructed according to the experimental obtained O/Ta ratios to calculate the microscopic properties It was shown that the oxygen vacancy significantly decreased the microscopic band gaps, which was due to the generation of a defect level in the energy gap formed by 5 d state of tantalum. The LIDT shar ed the same trend with the microscopic band gaps. With the increase of the O/Ta ratios from 2.44 and 2.47 to 2.50 t he LIDT increased by 62.2% and 54.7%, whereas the microscopic band gaps inc reased by 268% and 160%, respectively, compared to the initial value..

Keywords

Ta2O5 Oxygen vacancy, Absorption, Laser damage.

Citation

CHENG XU, MING MA, HUANHUAN SUN, DI LIN, PEIZHONG FENG, JIANWEI QI, YINGHUAI QIANG, DAWEI LI, CHUNXIAN TAO, Study on the relationship between laser induced d amage threshold and microscopic properties of Ta2O5 films by the combination of experiment and simulation, Optoelectronics and Advanced Materials - Rapid Communications, 9, 11-12, November-December 2015, pp.1337-1341 (2015).

Submitted at: Sept. 28, 2015

Accepted at: Oct. 28, 2015