"

Cookies ussage consent

I agree.

Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.

Study on a-plane GaN etching residual stress using Raman scattering

WANG DANG-HUI1,2,* , HAO YUE1, ZHANG JIN-CHENG1, XU SHENG-RUI1, BI ZHI-WEI1, ZHAO SHENG-LEI1, MENG FAN-NA1, XUE XIAO-YONG1, ZHANG LIN-XIA1

Affiliation

  1. State Key Lab. of Fundamental Science on Wide Band-Gap Semiconductor Technology School of Microelectronics, Xidian University, Xi’an 710071, China
  2. School of Materials Science and Engineering of Xi’an ShiYou University, Xi’an 710065, China

Abstract

In this study, we have studied the etching residual stress for a-plane GaN films grown on r-plane (1102) sapphire substrate with three different structures by low-pressure metal-organic vapor deposition (LPMOCVD). Scanning electron microscopy (SEM) and Raman scattering have been employed to study the surface morphology and residual stress before and after KOH solution etching. The three phonon modes of E2 (high), A1 (TO) and E1 (TO) and surface etching morphology of a-plane GaN have been observed. We calculated the residual stress using the biaxial elastic stress theory. Conclusions show that E2 (high) phonon shifts decrease after etching with KOH solution for a-plane GaN epilayer, which shows that KOH solution etching make the residual stress release. Based on the results, we indicated that there exists an approximate linear relation between residual stress etched by KOH solution and biaxial elastic stress system in a-plane GaN epilayers..

Keywords

Residual stress, Metal organic chemical vapor deposition, Raman frequency shift, KOH solution etching.

Citation

WANG DANG-HUI, HAO YUE, ZHANG JIN-CHENG, XU SHENG-RUI, BI ZHI-WEI, ZHAO SHENG-LEI, MENG FAN-NA, XUE XIAO-YONG, ZHANG LIN-XIA, Study on a-plane GaN etching residual stress using Raman scattering, Optoelectronics and Advanced Materials - Rapid Communications, 6, 7-8, July-August 2012, pp.761-764 (2012).

Submitted at: March 14, 2012

Accepted at: July 19, 2012