Abstract
The surface chemical etching behavior of pristine and oxygen irradiated Kapton-H was studied at different time intervals and
at different temperatures (at 40°C & 50°C for different time intervals in the steps of 15 minutes). The surface chemical
behavior is studied by the etching process. The parameter studied is the thickness of polymeric sample with etching at the
above mentioned two temperatures. These studies are conducted for pristine sample as well as oxygen irradiated polymeric
samples. The results clearly shows that etch rate increases in case of Oxygen irradiated samples as well as it shows
increase at higher temperature. These studies are very useful for industrial optoelectronic applications of Kapton-H, as
desired application can be made available if we know the etching parameters.
Keywords
Kapton H, Oxygen ion irradiation, Pristine.
Citation
D. SHIKHA, V. SHARMA, J. K. SHARMA, S. KUMAR, Study of surface chemical behavior of oxygen ion irradiated Kapton-H, Optoelectronics and Advanced Materials - Rapid Communications, 3, 8, August 2009, pp.839-844 (2009).
Submitted at: June 3, 2009
Accepted at: July 31, 2009