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Study of surface chemical behavior of oxygen ion irradiated Kapton-H

D. SHIKHA1, V. SHARMA1, J. K. SHARMA1, S. KUMAR1,*

Affiliation

  1. Department of Physics, Maharishi Markandeshwar University, Mullana(Ambala) –133 203, Haryana, India

Abstract

The surface chemical etching behavior of pristine and oxygen irradiated Kapton-H was studied at different time intervals and at different temperatures (at 40°C & 50°C for different time intervals in the steps of 15 minutes). The surface chemical behavior is studied by the etching process. The parameter studied is the thickness of polymeric sample with etching at the above mentioned two temperatures. These studies are conducted for pristine sample as well as oxygen irradiated polymeric samples. The results clearly shows that etch rate increases in case of Oxygen irradiated samples as well as it shows increase at higher temperature. These studies are very useful for industrial optoelectronic applications of Kapton-H, as desired application can be made available if we know the etching parameters.

Keywords

Kapton H, Oxygen ion irradiation, Pristine.

Citation

D. SHIKHA, V. SHARMA, J. K. SHARMA, S. KUMAR, Study of surface chemical behavior of oxygen ion irradiated Kapton-H, Optoelectronics and Advanced Materials - Rapid Communications, 3, 8, August 2009, pp.839-844 (2009).

Submitted at: June 3, 2009

Accepted at: July 31, 2009