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D. ROBIDAS1,* , S. SINGH1, S. PAL1, C. DHANAVANTRI1
GaN/InGaN light emitting diodes (LEDs) grown on sapphire substrates have mesa structure with current transport along the lateral direction due to the insulating nature of the substrate. Due to this geometry, the finite resistance of the n-type material of the GaN buffer and lower confinement layer causes the current to ‘‘crowd’’ near the edge of the contact. This problem give rises to unequal heating and unequal light emission from LED dice. Study on different die geometry shows current crowding problem can be reduced by using multi-finger design.
Light-emitting diodes (LEDs), Current crowding, Multi-Finger structure.
D. ROBIDAS, S. SINGH, S. PAL, C. DHANAVANTRI, Study of current crowding effect in different LED die structures, Optoelectronics and Advanced Materials - Rapid Communications, 4, 10, October 2010, pp.1461-1464 (2010).
Submitted at: Aug. 26, 2010
Accepted at: Oct. 14, 2010
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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