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Study of cast mono silicon solar cells with boron doped PERL structure

WENJIA LI1,* , ZHENJIAO WANG2, LINA SU1, JIAN REN1, J IANBO SHAO3

Affiliation

  1. Huaiyin Normal University, Huaian 2 23300 China
  2. Kingstone Semiconductor Co., Ltd, Shanghai 201203, China
  3. Jiangnan University, Wuxi 214122, China

Abstract

In this paper, p assivated emitter and rear locally diffused (PERL) structure was employed on cast mono silicon wafers to achieve high efficiency. Some critical fabrication parameters , such as sheet resistance, thickness of re ar passivation stack s , laser pattern and sintering temperature , w ere discussed and optimized The a verage and best efficienc ies reached to 19.20% and 19.54% with 80Ω/ □ sheet resistance (after oxidation) 240 nm rear SiO 2 /SiN x stacks, 1.2 mm laser pitch and 600 Al sintering . Afterwards, low temperature annealing in N 2 or air was performed on prepared cells. The efficiency of cells gained 0.18%abs after 150 annealing in N 2 . Finally , light induced degradation (LID) was studied. PERL solar cells on c ast mono silicon degenerate d 0.29%abs after illuminat ed with one sun for 200 minutes , which is much less than that of mono one s ( abs) due to the comparatively low interstitial oxygen concentration in cast mono wafers..

Keywords

S olar cells C ast mono crystalline silicon PERL H igh efficiency L ight induced degradation.

Citation

WENJIA LI, ZHENJIAO WANG, LINA SU, JIAN REN, J IANBO SHAO, Study of cast mono silicon solar cells with boron doped PERL structure, Optoelectronics and Advanced Materials - Rapid Communications, 12, 1-2, January-February 2018, pp.30-37 (2018).

Submitted at: June 26, 2017

Accepted at: Feb. 12, 2018