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Z. Ž. LAZAREVIĆ1,* , S. KOSTIĆ1, M. J. ROMĈEVIĆ1, J. TRAJIĆ1, B. HADŽIĆ1, D. STOJANOVIĆ1, N. Ž. ROMĈEVIĆ1
Bismuth silicon oxide (BSO), Bi12SiO20 has found application in various optoelectronic devices. Bi12SiO20 single crystals were grown by Czocharlski method. The conditions for growing this single crystal were calculated. The absence of a core was confirmed. The formation of phase and crystal structure of Bi12SiO20 was carried out by XRD analysis and Raman spectroscopy. It can be observed 18 active Raman modes. The three modes are new and not found in the available literature..
Bi12SiO20 single crystals, Czochralski method, Raman spectroscopy.
Z. Ž. LAZAREVIĆ, S. KOSTIĆ, M. J. ROMĈEVIĆ, J. TRAJIĆ, B. HADŽIĆ, D. STOJANOVIĆ, N. Ž. ROMĈEVIĆ, Study of Bi12SiO20 single crystals obtained by Czochralski method, Optoelectronics and Advanced Materials - Rapid Communications, 5, 2, February 2011, pp.150-152 (2011).
Submitted at: June 23, 2010
Accepted at: Feb. 17, 2011
Optoelectronics and Advanced Materials - Rapid Communications
(2024): Impact Factor = 0.4 - Journal Citation Reports (Clarivate Analytics, 2025)
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