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Studies on metal–semiconductor contacts with ZrN as metal layer

H. B. BHUVANESWARI1, K. P. S. S. HEMBRAM2, V. RAJAGOPAL REDDY1,* , G. MOHAN RAO2

Affiliation

  1. Department of Electronics, University of Mysore, Post-Graduate Centre, Hemagangotri, Hassan-573 220, India
  2. Department of Instrumentation, Indian Institute of Science, Bangalore 560012, India

Abstract

The electrical characteristics of reactive–sputtered ZrN refractory metal nitride contacts on p-type silicon, n-type germanium and p-type gallium nitride were investigated at room temperature. It was observed that the ZrN/Si and ZrN/Ge structures exhibited rectifying characteristics, whereas ZrN/GaN showed linear current–voltage characteristics with high resistance. Rectifying parameters of Schottky barrier structure such as reverse saturation current, barrier height and depletion capacitance for low frequencies were investigated by current-voltage (I-V) and capacitance-voltage (C-V) techniques. Schottky barrier height for as-deposited ZrN/Si, ZrN/Ge structures were found to be 0.83eV and 0.61eV, respectively. Scanning electron microscopy analysis was used to study the surface morphology of the films.

Keywords

Schottky barrier height, Depletion capacitance, Ohmic behavior, I-V and C-V techniques, ZrN.

Citation

H. B. BHUVANESWARI, K. P. S. S. HEMBRAM, V. RAJAGOPAL REDDY, G. MOHAN RAO, Studies on metal–semiconductor contacts with ZrN as metal layer, Optoelectronics and Advanced Materials - Rapid Communications, 1, 6, June 2007, pp.294-298 (2007).

Submitted at: April 14, 2007

Accepted at: April 25, 2007