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Structure of amorphous (GeS)1-хBiх thin films (0х0.15)

R. R. ROMANYUK1,* , O. G. MYKOLAYCHUK2

Affiliation

  1. Western Scientific Centre of the NAS of Ukraine, 4, Mateyko Str., Lviv, 79000, Ukraine
  2. Ivan Franko L'viv National University, 8, Kyryl and Mephodiy Str., Lviv, 79005, Ukraine

Abstract

The influence of Bi additions on the structure of short-range order of amorphous (GeS)1-хBiх films (0х0.15) has been investigated. The method of electron diffraction showed that the structure of condensates is described on the basis the model typical of solid solutions GeS-Bi2S3..

Keywords

GeS, Bi, Amorphous films, Structure.

Citation

R. R. ROMANYUK, O. G. MYKOLAYCHUK, Structure of amorphous (GeS)1-хBiх thin films (0х0.15), Optoelectronics and Advanced Materials - Rapid Communications, 8, 5-6, May-June 2014, pp.442-445 (2014).

Submitted at: Nov. 16, 2012

Accepted at: May 15, 2014