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Structure and photoluminescence properties of the quasi-regular arrangements of porous silicon

T. WANG1, X. LI1,* , W. FENG2,3, W. LI4, C. TAO4, J. WEN1

Affiliation

  1. College of Chemistry and Chemical Engineering, Chongqing University, Chongqing, 400044, P.R. China
  2. Department of Applied Physics, Chongqing University of Technology, Chongqing, 400054, China
  3. International Centre for Materials Physics, Chinese Academy of Sciences, Shenyang, 110016, China
  4. College of Optoelectronic Engineering, Chongqing University, Chongqing, 400044, P.R. China

Abstract

The morphology of porous silicon treated by electrochemical process depends sensitively on the anodization parameters, such as the current density and electrolyte concentration. In this work, the self-assembly quasi-regular arrangements porous silicon have been fabricated by controlling of the several important anodization parameters. The structure and luminescence characteristics of the etched porous silicon were studied. We discussed the influence of the current density on the morphology of the porous silicon layer and on the luminescence characteristics, and also investigated the effect of anodization time on the luminescence characteristics. Scanning electron microscopy (SEM) images showed that the pores have almost the same size and depth, grow perpendicular to the surface and parallel to each other. The pore diameter ranging from 500 nm to 1μm and pore depth being capable of reaching 20μm, fresh porous silicon can emit the red light at room temperature and be excited at 400 nm..

Keywords

Porous silicon, Electrochemical anodization, Quasi-regular arrangement, Photoluminescence.

Citation

T. WANG, X. LI, W. FENG, W. LI, C. TAO, J. WEN, Structure and photoluminescence properties of the quasi-regular arrangements of porous silicon, Optoelectronics and Advanced Materials - Rapid Communications, 5, 5, May 2011, pp.495-498 (2011).

Submitted at: March 17, 2011

Accepted at: May 31, 2011