Abstract
Polyol assisted Copper indium disulphide (CuInS2) is an absorber material for solar cell and photovoltaic applications. In this work, ethylene glycol (10ml) assisted CuInS2 thin films are grown in the temperature range 300, 350 and 400ºC on heated glass substrates. It is observed that the film growth temperature, the ion ratio (Cu/In = 1.25). The XRD patterns confirm that the polyol assisted CuInS2 polycrystalline thin films along (112) preferred plane and in other characteristic planes. Better crystalline qualities are obtained than undoped one. The EDAX results confirm the presence of Cu, In, and S. About 90% of light transmission occurs in the wavelength range 350-1100 nm. The band gap energy increases as the temperature increases from 300-400ºC (1.50-1.61eV). The absorption coefficient α is found to be in the order of 104 cm-1..
Keywords
Polyol assisted Copper Indium disulfide films, Optical properties, XRD, Spray pyrolysis.
Citation
C. MAHENDRAN, N. SURIYANARAYANAN, Structural and optical properties of polyol assisted nano-crystalline CuInS2 thin films, Optoelectronics and Advanced Materials - Rapid Communications, 7, 3-4, March-April 2013, pp.301-304 (2013).
Submitted at: Sept. 24, 2012
Accepted at: April 11, 2013