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A. A. M. FARAG1,* , F. S. TERRA2, G. M. M. FAHIM2, A. ASHERY2, MAHMOUD NASR2, M. M. EL OKR3
The flash evaporation technique was successfully used to deposit highly uniform, good adhesive and nearly stoichiometry PbTe thin films at substrate temperatures of 473 (sample 1) and 503 K (sample 2). The chemical composition of PbTe using energy dispersive X-ray (EDX) showed a nearly stoichiometric composition of sample 2 compared to that of sample 1.The transmission electron microscopy (TEM) results were in good agreement with the results of X-ray diffraction (XRD) analysis. Based on the use of the maxima and minima of the interference fringes, a straightforward analysis proposed by Swanepoel has been applied to derive the optical constants. The refractive index of PbTe thin films of sample 1 was low compared to that of sample 2. The optical transition responsible for optical absorption in the films was found to be direct allowed. The C-V characteristics of n-PbTe/p-Si at substrate temperatures of 473 (device 1) and 503 K (device 2) were studied at high frequency (1 MHz). The results showed that the main parameters such as the carrier concentration (NA), the built-in potential (Vb), the barrier height (b), the width of space charge region (W) and the maximum electrical field (Emax) of device 1 are low compared to device 2. Moreover, the increase in the carrier concentration of the two devices with temperature in the range 300-375 K can be attributed to the decrease in the width of the depletion region..
Flash evaporation, Thin film, Opticalcharacteristics, Nanocrystalline PbTe, n-PbTe/p-Si device.
A. A. M. FARAG, F. S. TERRA, G. M. M. FAHIM, A. ASHERY, MAHMOUD NASR, M. M. EL OKR, Structural and optical characterizations of nanocrystalline PbTe films prepared by flash evaporation and its device application, Optoelectronics and Advanced Materials - Rapid Communications, 7, 5-6, May-June 2013, pp.381-392 (2013).
Submitted at: Oct. 13, 2012
Accepted at: June 12, 2013
Optoelectronics and Advanced Materials - Rapid Communications
(2022): 0.5 - 2022 Journal Citation Reports (Clarivate Analytics, 2023)
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