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L. S. CHUAH1,* , Z. HASSAN1, H. ABU HASSAN1, C. W. CHIN1
In this work, we report on the structural and optical characterizations of wurtzite structure GaN thin films grown on Si(111) substrate by plasma-assisted molecular beam epitaxy (PAMBE). X-ray diffraction (XRD), micro-Raman and microphotoluminescence (PL) spectroscopies were used to evaluate the structural and optical properties of the GaN films. In order to examine the quality of the films, ω/2θ scan of XRD rocking curves (RC) at (0002) plane were carried out. Two intense peaks corresponding to GaN(0002) and AlN(0002) diffraction peaks were observed at 17.29° and 18.12°, respectively. The full width at half-maximum (FWHM) values of these peaks were 936 arcsec and 432 arcsec, respectively. Micro-Raman results showed that all the allowed Raman modes of GaN were visible. For the micro-PL measurement, an intense and broad band edge emission peak of GaN was observed at 364.48 nm. We assign this intense band edge emission to the neutral-donor bound exciton (I2). However, it is important to note that no discernible yellow emissions are observed in our PAMBE grown GaN epilayers although PL measurements were carried out at room temperature. This means that there are no detectable impurities from source materials or defects generated by energetic nitrogen ions from RF nitrogen source.
GaN, AlN, Si (111), PL, Raman, XRD, Crack-free films.
L. S. CHUAH, Z. HASSAN, H. ABU HASSAN, C. W. CHIN, Structural and optical characterization of hexagonal crack free GaN films grown on Si(111) by plasmaassisted molecular beam epitaxy (PAMBE), Optoelectronics and Advanced Materials - Rapid Communications, 2, 5, May 2008, pp.296-298 (2008).
Submitted at: March 26, 2008
Accepted at: May 8, 2008
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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