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Structural and electrical characterization of n-InAs/p-GaP heterojunctions prepared by vacuum flash evaporation and liquid phase epitaxy

A. A. M. FARAG1,2,* , F. S. TERRA3, A. ASHERY3, A. M. MANSOUR3

Affiliation

  1. Thin Film laboratory, Physics Department, Faculty of Education, Ain Shams University
  2. Physics Department, Faculty of Science and Arts, Aljouf University, KSA
  3. Solid State Electronics lab, Physics Department, Physics Division, National Research Center, Dokki, Giza, Egypt

Abstract

Thin films of n-InAs were successfully grown on p-GaP single crystalline substrates by using two different techniques (i.e. vacuum flash evaporation technique and liquid phase epitaxy). The elemental composition of the prepared films was confirmed by energy dispersive X-ray spectroscopy. The morphology of the film was characterized by scanning electron microscopy. Electrical characteristics of n-InAs/p-GaP heterojunction, prepared by both vacuum flash evaporation and liquid phase epitaxy were investigated. Current density–voltage and high frequency capacitance–voltage characteristics of the barrier were measured in the temperature range from 300 to 400 K. Analysis of current density–voltage characteristics showed that the forward current might be described by a classical thermal emission theory. The ideality factor of the current density–voltage characteristics was found to be dependent of temperature. The temperature dependence of the barrier height was discussed for both heterojunctions. Analysis of the capacitance–voltage characteristics under high frequency indicates abrupt heterojunction formation for the prepared n-InAs/p-GaP. The comparative studies of the prepared heterojunctions, prepared were also performed. The electrical properties were studied in the frequency range of 102–106 Hz. The dielectric constant and dielectric loss were analyzed as a function of frequency..

Keywords

Thin films, Liquid phase epitaxy, Vacuum flash evaporation, Electrical properties, Dielectric properties.

Citation

A. A. M. FARAG, F. S. TERRA, A. ASHERY, A. M. MANSOUR, Structural and electrical characterization of n-InAs/p-GaP heterojunctions prepared by vacuum flash evaporation and liquid phase epitaxy, Optoelectronics and Advanced Materials - Rapid Communications, 11, 1-2, January-February 2017, pp.82-87 (2017).

Submitted at: May 15, 2015

Accepted at: Feb. 10, 2017