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L. S. CHUAH1,* , Z. HASSAN1, C. W. CHIN1, H. ABU HASSAN1
In this paper, we report on the electrical characteristics and surface morphology of four different metal contacts (Ag, Ti, Pt and Ni) on GaN films grown on silicon substrate. The samples were annealed at different temperatures ranging from 300 °C to 900 °C under flowing nitrogen gas for 15 minutes. The electrical behaviors of the contacts were analyzed by currentvoltage (I-V) measurements. Scanning electron microscopy (SEM) measurements and energy dispersive spectroscopy (EDS) were carried out to examine the surface morphology and chemical composition of the metal contacts.
Thermal stability, Electrical characteristics, Surface morphology, GaN.
L. S. CHUAH, Z. HASSAN, C. W. CHIN, H. ABU HASSAN, Structural and electrical characteristics of metal contacts on n-type GaN/Si(111), Optoelectronics and Advanced Materials - Rapid Communications, 2, 12, December 2008, pp.842-845 (2008).
Submitted at: Nov. 12, 2008
Accepted at: Dec. 4, 2008
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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