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Stress at the coalesced boundary of GaN grown on maskless periodically grooved sapphire

NAISEN YU1,2,* , ZHANGWEN MAO1, DANYANG HU1, YING ZHAO1, QING YUAN1

Affiliation

  1. Chongqing Key Laboratory of Micro Nano Materials Engineering and Technology , Chongqing U niversity of A rts and S ciences , Chongqing 402160 , China
  2. Institute of Optoelectronic Technology, School of Physics and Materials Engineering Dalian Nationalities University, Dalian 116600, China

Abstract

Rectangular voids were found at the coalescence boundary in GaN laterally grown on maskless periodically grooved sapphire by metal organic chemical vapor deposition (MOCVD) in this paper. Stress distribution investigations were performed by micro-Raman spectroscopy. An increased compressive stress was found at the coalesc ence boundary in the wing regions. Using finite element analysis method, we found the rectangular voids present at the wing regions are the major source of stress concentration..

Keywords

GaN, Stress Void, Maskless periodically grooved sapphire.

Citation

NAISEN YU, ZHANGWEN MAO, DANYANG HU, YING ZHAO, QING YUAN, Stress at the coalesced boundary of GaN grown on maskless periodically grooved sapphire, Optoelectronics and Advanced Materials - Rapid Communications, 6, 11-12, November-December 2012, pp.1034-1036 (2012).

Submitted at: July 30, 2012

Accepted at: Oct. 30, 2012