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K. ALFARAMAWI1,* , O. MAHRAN1, W. EL SHIRBEENY1, S. ABBOUDY1
The gain characteristics for a bulk InP-InGaAsP homogeneous buried ridge stripe semiconductor optical amplifier are investigated. A wideband steady-state model is applicable. The gain spectrum is calculated at three different temperatures (T) of 220, 260 and 300 K and active region carrier concentrations (n) of 2.5 x 1024, 2.6 x 1024, 2.7 x 1024 m-3. It is found that the peak of the gain increases by increasing the active region carrier density at constant temperature and amplifier length. In contrast, the gain is lowered by increasing the temperature at fixed carrier density and cavity length. The effect of the amplifier length on the system characteristics is also studied. The longer the amplifier the higher the gain at constant T and n. The influence of the injected current on the fiber to fiber gain is investigated for different temperatures. A gain saturation is noticed at temperatures below 220 K for current exceeding 80 mA.
Semiconductor optical amplifier, Signal gain coefficient, Carrier concentration.
K. ALFARAMAWI, O. MAHRAN, W. EL SHIRBEENY, S. ABBOUDY, Steady-state properties of the wideband semiconductor optical amplifier, Optoelectronics and Advanced Materials - Rapid Communications, 1, 11, November 2007, pp.571-575 (2007).
Submitted at: Sept. 21, 2007
Accepted at: Oct. 31, 2007
Optoelectronics and Advanced Materials - Rapid Communications
(2024): Impact Factor = 0.4 - Journal Citation Reports (Clarivate Analytics, 2025)
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