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Stationary and transient photocurrents in some amorphous Ge-As-Se thin films

M. S. IOVU1,* , O. V. IASENIUC1

Affiliation

  1. Institute of Applied Physics, Str. Academiei 5, MD-2028 Chisinau, R. Moldova

Abstract

The stationary and transient characteristics of photoconductivity in thermally deposited amorphous Ge0.07As0.07Se0.86 thin films, with the theoretically calculated mean coordination number Z=2.21, are reported. Introduction of the metallic elements (Sn and Ge) in selenide and sulphide (As2S3, As2Se3, As-S-Se) glasses, lead to the appearance of the tetrahedral structural units in the base glasses, which change the mean coordination number Z. These changes lead to non-monotonous changes of the electrical, optical and photoelectrical characteristics, depending on the glass composition. It was found that the dependence of the photocurrent on light intensity has a power-law behavior Iph~F (1.0 0.5), which is characteristic for the amorphous semiconductors with the exponential distribution of the localized states in the band gap Eg..

Keywords

Chalcogenide glasses, Amorphous thin films, Coordination number, Photoconductivity.

Citation

M. S. IOVU, O. V. IASENIUC, Stationary and transient photocurrents in some amorphous Ge-As-Se thin films, Optoelectronics and Advanced Materials - Rapid Communications, 12, 9-10, September-October 2018, pp.563-567 (2018).

Submitted at: March 29, 2018

Accepted at: Oct. 10, 2018