"

Cookies ussage consent

Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.

Spectrometer based on p-AlxGa1-xAs/n-GaAs heterojunctions

V. TROFIM1,*

Affiliation

  1. Department of Microelectronics and Semiconductor Devices, Technical University of Moldova, MD-2004, Chisinau, Moldova

Abstract

Two types of spectrometers are manufactured into one single crystal, on the basis of p-AlxGa1-xAs/n-GaAs heterojunctions. The first type measures the wavelength of the laser which emits the same light intensity. The second one is the differential spectrometer measuring the laser wavelength which operates on different intensities of the emitted light. These spectrometers can measure the wavelength in the interval from 0.6 to 0.85 µm, or photon’s energies in the interval from 1.45 to 2.0 eV.

Keywords

Spectrometer, Heterojunctions p-AlxGa1-xAs/n-GaAs, Liquid-phase epitaxy, Variable forbidden band, Spectral sensitivity.

Citation

V. TROFIM, Spectrometer based on p-AlxGa1-xAs/n-GaAs heterojunctions, Optoelectronics and Advanced Materials - Rapid Communications, 2, 4, April 2008, pp.201-204 (2008).

Submitted at: March 5, 2008

Accepted at: April 3, 2008