Spectrometer based on p-AlxGa1-xAs/n-GaAs  heterojunctions
                
                        
                        V. TROFIM1,*
                            
                        
                    
                    Affiliation
                    
                        
                        - Department of Microelectronics and Semiconductor Devices, Technical University of Moldova, MD-2004,  Chisinau, Moldova
 
                        
                    
                     
        
        Abstract
        Two types of spectrometers are manufactured into one single crystal, on the basis of p-AlxGa1-xAs/n-GaAs heterojunctions. 
The first type measures the wavelength of the laser which emits the same light intensity. The second one is the differential 
spectrometer measuring the laser wavelength which operates on different intensities of the emitted light. These 
spectrometers can measure the wavelength in the interval from 0.6 to 0.85 µm, or photon’s energies in the interval from 
1.45 to 2.0 eV.
        Keywords
        Spectrometer, Heterojunctions p-AlxGa1-xAs/n-GaAs, Liquid-phase epitaxy, Variable forbidden band, Spectral sensitivity.
        Citation
        V. TROFIM, Spectrometer based on p-AlxGa1-xAs/n-GaAs  heterojunctions, Optoelectronics and Advanced Materials - Rapid Communications, 2, 4, April 2008, pp.201-204 (2008).
        Submitted at: March 5, 2008
 
        Accepted at: April 3, 2008