Spectrometer based on p-AlxGa1-xAs/n-GaAs heterojunctions
V. TROFIM1,*
Affiliation
- Department of Microelectronics and Semiconductor Devices, Technical University of Moldova, MD-2004, Chisinau, Moldova
Abstract
Two types of spectrometers are manufactured into one single crystal, on the basis of p-AlxGa1-xAs/n-GaAs heterojunctions.
The first type measures the wavelength of the laser which emits the same light intensity. The second one is the differential
spectrometer measuring the laser wavelength which operates on different intensities of the emitted light. These
spectrometers can measure the wavelength in the interval from 0.6 to 0.85 µm, or photon’s energies in the interval from
1.45 to 2.0 eV.
Keywords
Spectrometer, Heterojunctions p-AlxGa1-xAs/n-GaAs, Liquid-phase epitaxy, Variable forbidden band, Spectral sensitivity.
Citation
V. TROFIM, Spectrometer based on p-AlxGa1-xAs/n-GaAs heterojunctions, Optoelectronics and Advanced Materials - Rapid Communications, 2, 4, April 2008, pp.201-204 (2008).
Submitted at: March 5, 2008
Accepted at: April 3, 2008