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F. ŠROBÁR1, O. PROCHÁZKOVÁ1,*
Rare earth elements (RE) present in the growth melt have purifying effect on the III-V compounds layers because they form insoluble aggregates with chemical species responsible for shallow donors. Theory of this gettering phenomenon, based on particle conservation laws and mass action equation, is given and explicit form of the carrier concentration n versus RE content [RE] dependence is found. Also modeled is the case when the RE addition itself can contribute carriers so that the n - versus - [RE] curves exhibit a minimum. Computed results reproduce plausibly the observed data and provide new insights into some aspects of the gettering process.
Crystal growth, Rare earth elements, Gettering effects, III-V compounds.
F. ŠROBÁR, O. PROCHÁZKOVÁ, Simulation of the effects of rare earth elements presence in the growth of III-V compound layers, Optoelectronics and Advanced Materials - Rapid Communications, 1, 10, October 2007, pp.528-530 (2007).
Submitted at: Aug. 24, 2007
Accepted at: Aug. 30, 2007
Optoelectronics and Advanced Materials - Rapid Communications
(2024): Impact Factor = 0.4 - Journal Citation Reports (Clarivate Analytics, 2025)
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