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RAFID A. ABDULLAH1,* , KAMARULAZIZI IBRAHIM1
The simulation of high power with low threshold current of violet InGaN laser diode (LD) based on optimization of its active region has numerically been investigated. The simulation results indicated that the active region plays an important role for ptimization of violet InGaN LD. The output power as high as 128 mW has been obtained, while the threshold current is 13 mA, corresponding threshold current density 1.73 kA/cm2 is observed, the threshold voltage is 4 V. The importance of this simulation study of the violet InGaN LD is the coupling between relatively higher power with lower threshold current density..
Violet laser diode, Quantum well laser, InGaN.
RAFID A. ABDULLAH, KAMARULAZIZI IBRAHIM, Simulation of high power with low threshold current of violet InGaN laser diode based on optimization of its active region, Optoelectronics and Advanced Materials - Rapid Communications, 4, 3, March 2010, pp.287-290 (2010).
Submitted at: Feb. 5, 2010
Accepted at: March 12, 2010
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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