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E. P. SAMUEL1, K. TALELE1, U. ZOPE1, D. S. PATIL1,*
Semi-classical theoretical analysis of hole capture in a Gallium Nitride quantum wells has been carried out with hole-optical phonon scattering mechanism. Our analysis shows that the hole capture time varies as a function of the excess energy, quantum well width, barrier width and aluminum (Al) mole fraction in the barrier layer. Strong dependence of hole capture time on mole fraction x in the barrier layer of AlxGa1-xN has been attributed to the variation of energy and barrier height. Scattering rate due to hole-optical phonon as a function of narrow quantum well width seems to oscillate for different values of Al mole fraction increasing to a very high value with the increase of quantum well width. The energy distribution function for holes reveals nonlinear change with energy. The hole capture time was deduced to be varying from 0.3 ps to 65 ps with variation of structural parameters of the quantum well and Al mole fraction in the barrier.
Gallium Nitride, Hole Capture, Optical phonon scattering, Quantum well.
E. P. SAMUEL, K. TALELE, U. ZOPE, D. S. PATIL, Semi-classical analysis of hole capture in Gallium Nitride quantum wells, Optoelectronics and Advanced Materials - Rapid Communications, 1, 5, May 2007, pp.221-226 (2007).
Submitted at: Feb. 21, 2007
Accepted at: April 5, 2007
Optoelectronics and Advanced Materials - Rapid Communications
(2024): Impact Factor = 0.4 - Journal Citation Reports (Clarivate Analytics, 2025)
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