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Q. LIU1,* , X. LU1, B. POUMELLEC2, G. GIRARD3, J.-E. BOURÉE3, P. BULKIN3, B. DREVILLON3, A. KUDLINSKI4, Y. QUIQUEMPOIS4, H. ZEGHLACHE4, G. MARTINELLI4
Amorphous N-doped H:SiO2 films on silica prepared by Matrix Distributed Electron Cyclotron Resonance method were irradiated by electron-beam with different doses. With Maker fringe measurements, second-harmonic generation was observed in the irradiated regions and the films exhibited a maximum second-harmonic signal under the 5 μA/cm2, 480s irradiation condition. The magnitude of the induced second order nonlinear coefficient d33 is of the order of 0.003 pm/V. The d33 is small but the striking feature is the observation of a surface level shift connected to electron-beam poling with topography measurements. The surface level shifts increased with the increasing of electron doses in both X and Y directions, which fact was related to the implanted electron, dose. With different temperature for an annealing time of 1/2h, the surface level shifts in both X and Y directions increases firstly and got the maximum change at 300 °C, and then decreases when the temperature was increased. In the same time, the second-harmonics (SH) signal decreased to zero. The surface was recovered at the temperature of 1250 °C, which means that there was no matter loss with electron-beam writing in the films. The second harmonic generation in the films is caused by the frozen-in electric field induced by the charge implantation from the electron-beam (second order non linear coefficient χ(2) is proportional to this electric field). The strength of the electric field is determined by two conditions: the trapping centers (numbers, depth) and the remaining conductivity under large electric field.
Amorphous films, Electron irradiation, Second-harmonic generation, optical switching.
Q. LIU, X. LU, B. POUMELLEC, G. GIRARD, J.-E. BOURÉE, P. BULKIN, B. DREVILLON, A. KUDLINSKI, Y. QUIQUEMPOIS, H. ZEGHLACHE, G. MARTINELLI, Second-order nonlinearity of doped H:SiO2 films prepared by Matrix Distributed Electron Cyclotron Resonance and irradiated by electron beam, Optoelectronics and Advanced Materials - Rapid Communications, 1, 5, May 2007, pp.197-201 (2007).
Submitted at: Feb. 28, 2007
Accepted at: April 5, 2007
Optoelectronics and Advanced Materials - Rapid Communications
(2024): Impact Factor = 0.4 - Journal Citation Reports (Clarivate Analytics, 2025)
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